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ST Microelectronics
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| Part No. |
STV60NE06-16
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| OCR Text |
... I D = 250 A I D = 40 A 60 Min. 2 Typ. 3 0.013 Max. 4 0.016 Unit V A
On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V
...16
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symbol t d(on) tr Qg Q gs Q gd Parameter Tu... |
| Description |
N-CHANNEL 60V - 0.013 OHM - 60A POWERSO-10 STRIPFET POWER MOSFET
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| File Size |
122.99K /
6 Page |
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Micro Commercial Compon...
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| Part No. |
BCX51-16 BCX51-10
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| OCR Text |
...e(1) dc current gain (v ce =-2.0v, i c =-150ma) bcx51 bcx51-10 bcx51-16 63 63 100 --- --- --- 250 160 250 --- h fe(2) dc current gain (v ce =2.0v, i c =-5.0ma) h fe(3) dc current gain (v ce =-2.0v, i c =-500ma) v ce(sat) collecto... |
| Description |
PNP Plastic-Encapsulate Transistors
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| File Size |
258.59K /
2 Page |
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it Online |
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Freescale
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| Part No. |
SUD40N08-16
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| OCR Text |
...v ds = v gs , i d = 250 a 2.0 4.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 80 v, v gs = 0 v 1 zero gat...16 n-channel 80 v (d-s) 175 c mosfet free datasheet http:///
typical c... |
| Description |
N-Channel MOSFET
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| File Size |
360.55K /
5 Page |
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it Online |
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ECLIPTEK CORP
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| Part No. |
ECCM5A5DE-16-12.000M
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| OCR Text |
...meters) pin connection 1 input 2 case/ground 3 output 4 case/ground line marking 1 e12.00 e=ecliptek designator 2 xxxxx xxxxx=ecliptek m...16-12.000m high temperature infrared/convection ts max to tl (ramp-up rate) 3c/second maximum prehea... |
| Description |
CRYSTALS 30/20 -20 70 16PF P 12.000MHZ ATCUT FUND 6X3MM 4PAD SMD
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| File Size |
126.91K /
4 Page |
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it Online |
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