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  13.5 npt Datasheet PDF File

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    IHW20N120R2

Infineon Technologies AG
Part No. IHW20N120R2
OCR Text ...96 0 V, I C =2 0 A V G E = 15 V 13 nH 1887 59 47 143 nC pF Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteri...5 C , V C C = 60 0 V, I C = 2 0 A V G E = 0 /1 5 V, R G = 15 , 2) L =1 8 0n H, 2) C = 3 9p F 359 5...
Description Reverse Conducting IGBT with monolithic body diode

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    IHW20N120R

Infineon Technologies AG
Part No. IHW20N120R
OCR Text ...CE IC Value 1200 40 20 60 60 20 13 30 50 130 120 20 25 357 -40...+175 -55...+175 260 W C V Unit V A ICpul s IF VGE 1 J-STD-020 a...5 00 A VCE(sat) V G E = 15 V , I C = 20 A T j =2 5 C T j =1 2 5 C T j =1 7 5 C Diode forward voltage...
Description Reverse Conducting IGBT with monolithic body diode

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    IRGP30B120KD-EP

International Rectifier
Part No. IRGP30B120KD-EP
OCR Text ... Fig. 23 CT 1 CT 4 WF1 WF2 13, 15 CT 4 WF1 & 2 14, 16 CT 4 WF1 WF2 Ic =25A, VCC=600V VGE = 15V, Rg = 5, L =200H TJ = 125 C, Energy losses include tail and diode reverse recovery o Ic =25A, VCC=600V VGE = 15V, Rg = 5, L =200H TJ...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Motor Control Co-Pack IGBT

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    MID100-12A3 MII100-12A3

IXYS Corporation
Part No. MID100-12A3 MII100-12A3
OCR Text ... V; TJ = 125C) V0 = 1.5 V; R0 = 13.6 mW Free Wheeling Diode (typ. at TJ = 125C) V0 = 1.3 V; R0 = 6.5 mW Thermal Response Conduction VF IF IRM trr RthJC RthJS IF = 75 A, VGE = 0 V, IF = 75 A, VGE = 0 V, TJ = 125C TC = 25C TC = 80C IF =...
Description IGBT Modules: Boost Configurated IGBT Modules

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    MIO1200-25E10

IXYS Corporation
Part No. MIO1200-25E10
OCR Text ...A 365 250 980 345 1150 1250 186 13.7 3.0 12.2 ns ns ns ns mJ mJ nF nF nF C 0.009 K/W Inductive load; TVJ = 125C; VGE = 15 V; VCC = 1250V; IC = 1200A; RG = 1.5; L = 100nH VCE = 25 V; VGE = 0 V; f = 1 MHz IC = 1200 A; VCE = 1250 V; VGE ...
Description IGBT Module Single switch

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    VDI75-12P1 VIO75-12P1 VII75-12P1 VID75-12P1

IXYS[IXYS Corporation]
IXYS, Corp.
Part No. VDI75-12P1 VIO75-12P1 VII75-12P1 VID75-12P1
OCR Text ...A TJ = 25C VGE =17 V 15 V 13 V 11 V 100 IC 120 A TJ = 125C 100 IC 80 60 40 VGE =17 V 15 V 13 V 11 V 80 60 40 9V 9V 20 0 0,0 81T120 20 0 81T120 0,5 1,0 1,5 2,0 2,5 VCE 3,0 V 0,0 0,5 ...
Description    IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA
IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA 92 A, 1200 V, N-CHANNEL IGBT

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    IXYS
Part No. IXDA20N120AS
OCR Text ...Eoff RthJC 9.65 10.29 6.22 8.13 2.54 BSC 14.61 2.29 1.02 1.27 0 0.46 15.88 2.79 1.40 1.78 0.20 0.74 .380 .405 .245 .320 .100 BSC .575 ...5 0 0 1 2 VCE 11V 9V 10 5 0 3 V 4 0 1 2 3 VCE 4 V 5 Fig....
Description IGBT Discretes: npt IGBT
High Voltage IGBT

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    IXYS[IXYS Corporation]
Part No. IXGT16N170AH1 IXGH16N170AH1 IXGH16N170A IXGT16N170A
OCR Text ...ting torque (M3) TO-247 1.13/10Nm/lb.in. 300 250 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Plast...5.0 50 100 750 1.5 100 TJ = 125C 4.0 4.8 5.0 V V A A A mA nA V V Features International standard ...
Description    High Voltage IGBT

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    IXGT16N170 IXGH16N170

IXYS Corporation
Part No. IXGT16N170 IXGH16N170
OCR Text ...eight Mounting torque (M3) 1.13/10Nm/lb.in. TO-247 AD TO-268 6 4 g g Symbol Test Conditions Characteristic Values (TJ = 25C, unl...5.0 50 500 100 TJ = 25C TJ = 125C 2.7 3.3 3.5 V V A A nA V V BVCES VGE(th) ICES IGES VCE(sat) ...
Description High Voltage IGBT

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    IXYS[IXYS Corporation]
Part No. MUBW35-12A7
OCR Text ...2 D1 T3 18 17 T4 D3 T5 20 19 T6 13 D5 5 D4 4 D6 9 Three Phase Rectifier VRRM = 1600V IDAVM = 44 A IFSM = 400 A Brake Chopper VCES = 1200 V IC25 = 35 A VCE(sat) = 2.3 V Three Phase Inverter VCES = 1200 V IC25 = 50 A VCE(sat...
Description Converter - Brake - Inverter Module (CBI2)

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