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SST
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| Part No. |
SST29LE010 29LE010B
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| OCR Text |
...ical) Fast Page-Write Operation 128 Bytes per Page, 1024 Pages Page-Write Cycle: 5 ms (typical) Complete Memory Rewrite: 5 sec (typical) Eff...Megabit Page Mode EEPROM
contains the optional JEDEC approved Software Data Protection scheme. SST ... |
| Description |
3.0V-only 1 Megabit Page Mode EEPROM
From old datasheet system
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| File Size |
859.24K /
24 Page |
 View
it Online |
Download Datasheet
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SST
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| Part No. |
SST29LE020 29XE020
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| OCR Text |
...) * Fast Page Write Operation - 128 Bytes per Page, 2048 Pages - Page Write Cycle: 5 ms (typical) - Complete Memory Rewrite: 10 sec (typical...Megabit Page Mode EEPROM SST29EE020 / SST29LE020 / SST29VE020
Read The Read operations of the SST29... |
| Description |
2 Megabit (256K x 8) Page Mode EEPROM
From old datasheet system
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| File Size |
269.14K /
28 Page |
View
it Online |
Download Datasheet |
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SST
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| Part No. |
SST29VE010 29VE010B
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| OCR Text |
...ical) Fast Page-Write Operation 128 Bytes per Page, 1024 Pages Page-Write Cycle: 5 ms (typical) Complete Memory Rewrite: 5 sec (typical) Eff...Megabit Page Mode EEPROM
contains the optional JEDEC approved Software Data Protection scheme. SST ... |
| Description |
2.7V-only 1 Megabit Page Mode EEPROM
From old datasheet system
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| File Size |
858.18K /
24 Page |
View
it Online |
Download Datasheet |
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Intersil, Corp.
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| Part No. |
DP3D64MX8RY5-60C
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| OCR Text |
...am?s available in 512, 256 and 128 megabits. the 64 megabit based m-densus modules have been designed to fit in the same footprint as the 8 meg x 8 dram tsop monolithic and are backward compatible with the 16 megabit based family of m-d... |
| Description |
64K X 8 FAST PAGE DRAM MODULE, 60 ns, QMA48 LEADLESS, TSOP-48
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| File Size |
247.90K /
2 Page |
View
it Online |
Download Datasheet |
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Aeroflex, Inc.
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| Part No. |
ACT-E128K32C-150P7Q ACT-E128K32C-120P7Q ACT-E128K32C-250P7Q ACT-E128K32N-200F2Q ACT-E128K32N-250F2Q ACT-E128K32N-120F2Q
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| OCR Text |
...ponents. the device contains a 128-byte page register to allow writing of up to 128 bytes simultaneously. during a write cycle, the address and 1 to 128 bytes of data are internally latched, freeing the address and data bus for other opera... |
| Description |
128K X 32 EEPROM 5V MODULE, 150 ns, CPGA66 CERAMIC, PGA-66
128K X 32 EEPROM 5V MODULE, 120 ns, CPGA66 CERAMIC, PGA-66
128K X 32 EEPROM 5V MODULE, 250 ns, CPGA66 CERAMIC, PGA-66
128K X 32 EEPROM 5V MODULE, 200 ns, CQMA68
128K X 32 EEPROM 5V MODULE, 250 ns, CQMA68
128K X 32 EEPROM 5V MODULE, 120 ns, CQMA68
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| File Size |
170.23K /
12 Page |
View
it Online |
Download Datasheet |
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Spansion, Inc.
SPANSION LLC
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| Part No. |
S29NS016J0PBJW003 S29NS064J0LBJW000
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| OCR Text |
128 megabit (8 m x 16-bit), 64 megabit (4 m x 16-bit), 32 megabit (2 m x 16-bit), an d 16 megabit (1 m x 16 bit), 110 nm cmos 1.8-volt only simultaneous read/write, burst mode flash memories data sheet notice to readers: this document s... |
| Description |
110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories 1M X 16 FLASH 1.8V PROM, 65 ns, PBGA44
4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44
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| File Size |
2,091.11K /
73 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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