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  120v.collector-base Datasheet PDF File

For 120v.collector-base Found Datasheets File :: 1284    Search Time::1.188ms    
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    SEMELAB LTD
Part No. 2N5682.MODE1
OCR Text ...e t j junction temperature 100v 120v 100v 120v 4v 1a 0.5a 10w 1w ?65 to +200c 200c mechanical data dimensions in mm (inches) ...collector parameter test conditions min. typ. max. unit a a ma a v mhz pf r thj-case r thj-amb 17....
Description 1000 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39

File Size 41.71K  /  2 Page

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    ZTX605 ZTX604K

Zetex Semiconductors
Part No. ZTX605 ZTX604K
OCR Text ... a m a m a m a v cb =100v v cb =120v v cb =100v, t amb =100c v cb =120v, t amb =100c emitter cut-off current i ebo 0.1 0.1 m a v eb =8v coll...collector-emitter saturation voltage v ce(sat) 1.0 1.5 1.0 1.5 v v i c =250ma, i b =0.25ma* i c =1a,...
Description NPN Darlington Transistor
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS

File Size 90.70K  /  3 Page

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    BSW67A

Seme LAB
Part No. BSW67A
OCR Text ... resistance junction to ambient 120v 120v 1.0a 2a 0.7w 5w 2.85w ?65 to 200c 200c 35c / w 220c / w mechanical data dimensions in mm (inches)...collector 0.89 (0.035) max. 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 0.71...
Description SILICON NPN PLANAR TRANSISTOR

File Size 27.13K  /  2 Page

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    ZXTN2010ZTA ZXTN2010Z

ZETEX[Zetex Semiconductors]
Part No. ZXTN2010ZTA ZXTN2010Z
OCR Text ... 1k I C =10mA* I E =100 A V CB =120V VCB=120V,Tamb=100 C V CB =120V VCB=120V,Tamb=100 C V EB =6V I C =100mA, I B =5mA* IC=1A, IB=100mA* IC=1A, IB=50mA* IC=2A, IB=50mA* IC=6A, IB=300mA* I C =6A, I B =300mA* I C =6A, V CE =1V* I C =10mA, V CE...
Description From old datasheet system
60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89

File Size 122.83K  /  6 Page

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    ZXTN04120HFF ZXTN04120HFFTA

Diodes Incorporated
Part No. ZXTN04120HFF ZXTN04120HFFTA
OCR Text 120v, sot23f, npn medium power darlington transistor summary bv ceo > 120v i c(cont) = 1a v ce(sat) < 1.5v @ 1a p d = 1.5w complement...collector-base voltage v cbo 140 v collector-emitter voltage v ceo 120 v emitter-base voltage v ebo ...
Description 120V, SOT23F, NPN medium power Darlington transistor

File Size 433.27K  /  8 Page

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    BDS18SMD05

Seme LAB
Part No. BDS18SMD05
OCR Text ...bo collector ? base voltage -120v v ceo collector ? emitter voltage -120v v ebo emitter ? base voltage -5v i c continuous collector current -8a i b base current -2a p d total power dissipation at t c 75c 80w ...
Description SILICON PLANAR EPITAXIAL PNP TRANSISTOR

File Size 343.90K  /  3 Page

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    BDS18SMD

Seme LAB
Part No. BDS18SMD
OCR Text ...bo collector ? base voltage -120v v ceo collector ? emitter voltage -120v v ebo emitter ? base voltage -5v i c continuous collector current -8a i b base current -2a p d total power dissipation at t c 75c 80w ...
Description SILICON PLANAR EPITAXIAL PNP TRANSISTOR

File Size 456.61K  /  3 Page

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    KTA151706

KEC(Korea Electronics)
Part No. KTA151706
OCR Text ...features high voltage : v ceo =-120v. excellent h fe linearity : h fe (0.1ma)/h fe (2ma)=0.95(typ.). high h fe : h fe =200 700. low noise :...collector sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k ...
Description EPITAXIAL PLANAR PNP TRANSISTOR

File Size 44.80K  /  3 Page

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    http://
Part No. 2N5551
OCR Text ...ollector cutoff current v cb = 120v, i e = 0 v cb = 120v, i e = 0, t a = 100 c 50 50 na a i ebo emitter cutoff current v eb = 4.0v, ...collector-emitter saturation voltage i c = 10ma, i b = 1.0ma i c = 50ma, i b = 5.0ma 0.15 0.20 v...
Description NPN General Purpose Amplifier

File Size 156.29K  /  5 Page

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