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  10v ms Datasheet PDF File

For 10v ms Found Datasheets File :: 14775    Search Time::1.094ms    
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    2SJ485 2SJ485TP-FA

Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SJ485 2SJ485TP-FA
OCR Text ...-60V, VGS=0 VGS=16V, VDS=0 VDS=-10v, ID=-1mA VDS=-10v, ID=-2A ID=-2A, VGS=-10v ID=-2A, VGS=-4V VDS=-20V, f=1MHz VDS=-20V, f=1MHz VDS=-20V, f...ms DC op era tio n 10 1.2 PD -- Ta 10 s Allowable Power Dissipation, PD - W 2 3 5 ...
Description TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 4A I(D) | TO-252VAR
P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 42.21K  /  4 Page

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    2SJ486

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ486
OCR Text ...0.4 0.65 -- I D = -100mA VDS = -10v*1 Input capacitance Output capacitance -- -- -- -- -- -- -- 45 76 5.4 120 340 850 550 -- -- -- -- -- -- ...ms -0.3 -0.1 -0.03 -0.01 150 = (1 10 sh ms ot ) D C O Channel Dissipation Drain Cu...
Description RELAY-.5AMP-DC-6V/DIODE RoHS Compliant: Yes 硅P通道MOS FET的低FrequencyPower开
Silicon P Channel MOS FET Low FrequencyPower Switching
Silicon P-Channel MOS FET

File Size 40.30K  /  8 Page

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    2SJ496

HITACHI[Hitachi Semiconductor]
Part No. 2SJ496
OCR Text ...16V, VDS = 0 I D = -1mA, VDS = -10v I D = -2.5A VGS = -10v*1 I D = -2.5A VGS = -4V*1 I D = 2.5A, VDS = 10v*1 VDS = -10v VGS = 0 f = 1MHz VGS...ms s (1 10 m sh s ot) -0.03 0 50 100 150 Ta (C) 200 Ta = 25 C -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 ...
Description Silicon P-Channel MOS FET High Speed Power Switching

File Size 49.68K  /  10 Page

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    2SJ499

SANYO[Sanyo Semicon Device]
Part No. 2SJ499
OCR Text ...30V, VGS=0 VGS=16V, VDS=0 VDS=--10v, ID=--1mA VDS=--10v, ID=-5A ID=--5A, VGS=--10v ID=--2A, VGS=--4V VDS=--10v, f=1MHz VDS=--10v, f=1MHz VDS...ms era tio n Operation in this area is limited by RDS(on). Tc=25C Single pulse 2 3 5 7 ...
Description Load Switching Applications

File Size 31.35K  /  4 Page

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    2SJ501

SANYO[Sanyo Semicon Device]
Part No. 2SJ501
OCR Text ...=-20V, VGS=0 VGS=8V, VDS=0 VDS=-10v, ID=-1mA VDS=-10v, ID=-300mA ID=-300mA, VGS=-4V ID=-50mA, VGS=-2.5V -0.5 0.2 1.0 420 630 600 1000 Condit...ms Switching Time, SW Time - ns 3 2 100 7 5 3 2 10 7 5 3 2 1.0 3 5 7 -0.1 2 3 5 7 -1.0 2 3 ...
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 237.49K  /  4 Page

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    2SJ502

Sanyo Electric Co., Ltd.
Sanyo Semicon Device
Part No. 2SJ502
OCR Text ...-30V, VGS=0 VGS=16V, VDS=0 VDS=-10v, ID=-1mA VDS=-10v, ID=-300mA ID=-300mA, VGS=-10v ID=-300mA, VGS=-4V -1.0 300 800 360 690 600 970 Conditions Ratings min -30 -10 10 -2.5 typ max Unit V A A V ms m m Marking : FM Continued on next pag...
Description Ultrahigh-Speed Switching Applications 超高速开关应
P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 169.75K  /  4 Page

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    2SJ503 2SJ503TP-FA

Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SJ503 2SJ503TP-FA
OCR Text ...-30V, VGS=0 VGS=16V, VDS=0 VDS=-10v, ID=-1mA VDS=-10v, ID=-4A ID=-4A, VGS=-10v ID=-2A, VGS=-4V VDS=-10v, f=1MHz VDS=-10v, f=1MHz VDS=-10v, f...ms tr td(on) era tio n 7 -1.0 2 3 5 7 -10 2 3 Ta=25C Single pul...
Description TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 4A I(D) | TO-251VAR 晶体管| MOSFET的| P通道| 30V的五(巴西)直| 4A条(丁)|51VAR
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated &#181;P Reset 晶体管| MOSFET的| P通道| 30V的五(巴西)直| 4A条(丁)|52VAR
P-Channel Silicon MOSFET DC/DC Converter Applications

File Size 86.59K  /  4 Page

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    2SJ504

HITACHI[Hitachi Semiconductor]
Part No. 2SJ504
OCR Text ...16V, VDS = 0 I D = -1mA, VDS = -10v I D = -10A, VGS = -10v*1 I D = -10A, VGS = -4V*1 I D = 10A, VDS = 10v*1 VDS = -10v VGS = 0 f = 1MHz VGS ...ms s 1 (1 sh (T 10 s at ion ot) 10 Operation in this area is limited by R DS...
Description    Silicon P Channel MOS FET High Speed Power Switching

File Size 50.21K  /  10 Page

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    2SJ505 2SJ505L 2SJ505S

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ505 2SJ505L 2SJ505S
OCR Text ...16V, VDS = 0 I D = -1mA, VDS = -10v I D = -25A, VGS = -10v*1 I D = -25A, VGS = -4V*1 I D = 25A, VDS = 10v*1 VDS = -10v VGS = 0 f = 1MHz VGS ...ms (T ion (1 sh 20 Operation in this area is limited by R DS(on) c= ot) ) ...
Description    Silicon P Channel MOS FET High Speed Power Switching
Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开
Power switching MOSFET

File Size 53.43K  /  10 Page

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    2SJ520 2SJ520TP-FA

Sanyo Semicon Device
Sanyo Electric Co., Ltd.
Part No. 2SJ520 2SJ520TP-FA
OCR Text ...=-20V, VGS=0 VGS=8V, VDS=0 VDS=-10v, ID=-1mA VDS=-10v, ID=-5A ID=-5A, VGS=-4V ID=-1A, VGS=-2.5V VDS=-10v, f=1MHz VDS=-10v, f=1MHz VDS=-10v, ...ms 0m s tio n Operation in this area is limited by RDS(on). Total Gate Charge, Qg ...
Description P-Channel Silicon MOSFET Load Switching Applications
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated &#181;P Reset 晶体管| MOSFET的| P通道| 20V的五(巴西)直| 10A条(丁)|52VAR

File Size 43.24K  /  4 Page

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For 10v ms Found Datasheets File :: 14775    Search Time::1.094ms    
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |   

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