100k mar.20.03 pdf Datasheet P10 Full Text Search --- IC-ON-LINE


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100k mar.20.03 Datasheet PDF File

For 100k mar.20.03 Found Datasheets File :: 215 Search Time::1.218ms
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				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9K2G08U0M-F K9K2G08U0M-V K9K2G08Q0M-P K9K2G08Q0M-Y K9K2G08U0M K9XXG08UXM-E K9XXG08UXM-K K9XXG08UXM-P K9XXG08UXM-Y K9XXG16UXM-E K9XXG16UXM-K K9XXG16UXM-P K9XXG16UXM-Y K9K2G16Q0M-Y K9K2G16Q0M-P K9K2G08Q0M-PCB0 K9K2G08U0M-VCB0 K9K2G08U0M-FCB0 K9K2G08Q0M-YCB0
OCR Text	...g-Gate Technology - Endurance : 100k Program/Erase Cycles - Data Retention : 10 Years * Command Register Operation * Cache Program Operation for High Performance Program * Power-On Auto-Read Operation * Intelligent Copy-Back Operation * Uni...
Description	256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
File Size	676.60K / 39 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	KFG1G16D2M-DED KFG1G16Q2M-DEB KFG1G16Q2M-DED KFG1G16Q2M-DIB KFH1G16U2M-DID KFG1216D2M-DEB KFG1216D2M-DED KFG1216D2M-DIB KFG1216D2M-DID KFG1216Q2M-DEB KFG1216Q2M-DED KFG1216Q2M-DIB KFG1216Q2M-DID KFG1216U2M KFG1216U2M-DEB KFG1216U2M-DED KFG1216U2M-DIB KFG1216U2M-DID KFG1G16D2M-DEB KFG1G16D2M-DIB KFG1G16D2M-DID KFG1G16Q2M-DID KFG1G16U2M-DEB KFG1G16U2M-DED KFG1G16U2M-DIB KFG1G16U2M-DID KFH1216D2M-DEB KFH1216D2M-DED KFH1216D2M-DIB KFH1216D2M-DID KFH1216Q2M-DEB KFH1216Q2M-DED KFH1216Q2M-DIB KFH1216Q2M-DID KFH1216U2M-DEB KFH1216U2M-DED KFH1216U2M-DIB KFH1216U2M-DID KFH1G16D2M-DEB KFH1G16D2M-DED KFH1G16D2M-DIB KFH1G16D2M-DID KFH1G16Q2M-DEB KFH1G16Q2M-DED KFH1G16Q2M-DIB KFH1G16Q2M-DID KFH1G16U2M-DEB KFH1G16U2M-DED KFH1G16U2M-DIB
OCR Text	...g-Gate Technology - Endurance : 100k Program/Erase Cycles - Data Retention : 10 Years Hardware Features * Voltage detector generating internal reset signal from Vcc * Hardware reset input (RP) * Data Protection - Write Protection for B...
Description	FLASH MEMORY
File Size	1,205.32K / 93 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HY27UH084G2M HY27UH164G2M
OCR Text	...16)4G2M extended reliability of 100k program/erase cycles by providing ECC (Error Correcting Code) with real time mapping-out algorithm. Optionally the chip could be offered with the CE# don't care function. This option allows the direct do...
Description	(HY27xHxx4G2M Series) 4G-Bit NAND Flash Memory
File Size	365.64K / 42 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	K9K8G08U0A-Y K9WAG08U1A-Y K9NBG08U5A K9NBG08U5A-P K9WAG08U1A067 K9XXG08UXA06 K9K8G08U0A K9WAG08U1A K9WAG08U1A-I
OCR Text	...g-Gate Technology - Endurance : 100k Program/Erase Cycles(with 1bit/512Byte ECC) - Data Retention : 10 Years * Command Driven Operation * Intelligent Copy-Back with internal 1bit/528Byte EDC * Unique ID for Copyright Protection * Package : ...
Description	1G X 8 BIT / 2G X 8 BIT / 4G X 8 BIT NAND FLASH MEMORY
File Size	1,072.37K / 50 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	XN05553 XN5553
OCR Text	...= 10V, IC = 1mA, GV = 80dB Rg = 100k, Function = FLAT VCB = 10V, IE = -2mA, f = 200MHz 400 0.05 80 150 min 100 100 15 0.1 1.0 2000 0.2 V mV ...MAR ...
Description	Composite Device - Composite Transistors From old datasheet system Silicon NPN epitaxial planer transistor
File Size	79.88K / 3 Page	View it Online	Download Datasheet

				Panasonic Semiconductor
Part No.	XP06501
OCR Text	...240 300 -25C 120 Rg=100k 120 200 80 22k 4.7k 100 60 40 0 0.1 0.3 1 3 10 30 100 0 -0...MAR ...
Description	Silicon NPN epitaxial planer transistor
File Size	46.55K / 3 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HY27US08281A HY27US08282A HY27US16281A HY27US16282A
OCR Text	...16)281A extended reliability of 100k program/ erase cycles by providing ECC (Error Correcting Code) with real time mapping-out algorithm. Optionally the chip could be offered with the CE# don't care function. This option allows the direct d...
Description	128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory
File Size	342.72K / 44 Page	View it Online	Download Datasheet

				ST Microelectronics
Part No.	EMIF10-COM01C1
OCR Text	...t 0V bias Vinput = 2.8V Rload = 100k IR = 1 mA VRM = 3V per line IPP = 10A, tp = 2.5s 180 1 200 45 220 50 25 Parameter Breakdown voltage Lea...Mar-2005 Revision 1 First issue. Description of Changes 6/7 EMIF10-COM01C1 Information furn...
Description	EMI FILTER INCLUDING ESD PROTECTION
File Size	123.94K / 7 Page	View it Online	Download Datasheet

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