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  0.7-2.5ghz Datasheet PDF File

For 0.7-2.5ghz Found Datasheets File :: 2078    Search Time::4.938ms    
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    MGFS36E2325 MGFS36E232510

Mitsubishi Electric Semiconductor
Part No. MGFS36E2325 MGFS36E232510
OCR Text ... designed for WiMAX CPE. 4.5 1.0 FEATURES * * * * * * * * * InGaP HBT Device 6V Operation 27dBm Linear Output Power 33dB Linear Gain In...7 6 APPLICATIONS IEEE802.16-2004, IEEE802.16e-2005 1 2 3 4 5 1 2 3 4 5 6 7 8 9 10 Pin ...
Description 2.3-2.5GHz HBT HYBRID IC

File Size 65.44K  /  6 Page

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    MGFS36E2527 MGFS36E252707

Mitsubishi Electric Sem...
Mitsubishi Electric Semiconductor
Part No. MGFS36E2527 MGFS36E252707
OCR Text ... designed for WiMAX CPE. 4.5 1.0 FEATURES * * * * * * * * * InGaP HBT Device 6V Operation 27dBm Linear Output Power 33dB Linear Gain In...7 6 APPLICATION IEEE802.16-2004, IEEE802.16e-2005 1 2 3 4 5 1 2 3 4 5 6 7 8 9 10 Pin V...
Description 2.5-2.7GHz HBT HYBRID IC

File Size 70.91K  /  7 Page

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    UPG2159T5K UPG2159T5K-E2

California Eastern Labs
Part No. UPG2159T5K UPG2159T5K-E2
OCR Text ...vice can operate from frequency 0.05GHz to 3.0GHz, with low insertion loss and high isolation This device is housed in a 6-pin TSSON (Thin S...7 Vcont1 - Vcont2 3.3V 2.7V Note3 1.8 Vcont1 - Vcont2 Bm Absolute MAX_Pin V.S. Vcont RECOMMEND...
Description L,S-BAND MINIATURE SPDT SWITCH

File Size 224.19K  /  11 Page

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    SGB-6433

List of Unclassifed Manufacturers
ETC[ETC]
Part No. SGB-6433
OCR Text ...tion - lead) dB dB mA dB C/W 12.0 8.5 76 dB 28.5 dBm 16.5 dB 14.5 Unit MHz Min. DC 20.0 16.0 15.0 18.5 18.5 17.5 33.0 31.0 31.0 15 11.5 88 4...7 34.0 18.9 33.3 13.9 24.6 3.6 850MHz 20.0 33.0 18.5 25.6 12.2 25.0 3.6 1950MHz 16.0 31.0 18.5 15.0 ...
Description DC-3.5 GHz Active Bias Gain Block

File Size 133.76K  /  6 Page

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    ALM-31222 ALM-31122 ALM-31322 ALM-32120 ALM-32220 ALM-32320 ALM-32320-BLKG ALM-32320-TR1G ALM-32320-TR2G MGA-30216 MGA-3

AVAGO TECHNOLOGIES LIMITED
Part No. ALM-31222 ALM-31122 ALM-31322 ALM-32120 ALM-32220 ALM-32320 ALM-32320-BLKG ALM-32320-TR1G ALM-32320-TR2G MGA-30216 MGA-30116 MGA-30316
OCR Text ...Avago Technologies' proprietary 0.25um GaAs Enhancement-mode pHEMT process. All matching components are fully integrated within the module a...7.0 x 10.0 x 1.1 mm3 20-lead multiple-chips-onboard (MCOB) module package. Features * Fully matc...
Description 3.3GHz 3.9GHz 2 Watt High Linearity Amplifier

File Size 907.19K  /  11 Page

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    RF2129 RF2129PCBA

RFMD[RF Micro Devices]
Part No. RF2129 RF2129PCBA
OCR Text ...oisture sensitivity Rating -0.5 to +6.0 -0.5 to 3.3 350 +12 -40 to +85 -40 to +150 JEDEC Level 3 Unit VDC V mA dBm C C Refer to "...7 -23 -30 -35 Unit Condition T=25 C, VCC =3.3V, VPC =3.0V, PIN =0dBm, Freq=2450MHz +24.5 ...
Description 3V, 2.5GHZ LINEAR POWER AMPLIFIER

File Size 83.01K  /  6 Page

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    HMC94911

Hittite Microwave Corporation
Part No. HMC94911
OCR Text ...m test fxture connected via (2) 0.025 mm (1 mil) diameter wire bonds of 0.31 mm (12 mil) length. s aturated o utput p ower: +3...7.5 c/ w s torage temperature -65 to +150 c o perating temperature -55 to +85 c vdd (v) idd (ma) +5....
Description GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 12 - 16 GHz

File Size 502.32K  /  10 Page

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    STANFORD[Stanford Microdevices]
Part No. SCA-3
OCR Text ...ew Designs dB 13 12 11 10 0 1 2 3 4 5 6 Product Features High Output IP3: 32.8 dBm @ 850 MHz Cascadable 50 Ohm Gain Block Patent...7 13.6 13.6 5000 1.7:1 1.5:1 18.3 18.4 18.4 5.6 4.4 4.9 224 5.4 Max. Frequency (GHz) Electrica...
Description DC-5 GHZ CASCADABLE GAAS HBT MMIC AMPLIFIER

File Size 554.25K  /  6 Page

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    RF5924PCBA-41X RF59241

RF Micro Devices
Part No. RF5924PCBA-41X RF59241
OCR Text ...ply Current 16 2.5 180 20.5 -38.0 -56 240 -33.5 -53 260 3.3 220 dBm % mA dBm dBc dBc mA Nominal conditions: VCC =3.7V; PA_EN=2.79V; Freq=...7 10 2.0 7 dB dB/V A s dB dBc -38 25 10 20 15.5 Out of Band Performance S21 (DC to 960MHz)...
Description 3.7V, SINGLE-BAND FRONT-END MODULE

File Size 240.45K  /  14 Page

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    TIM0910-4

Toshiba Semiconductor
Part No. TIM0910-4
OCR Text ...C ) UNIT mS V A V C/W MIN. -2.0 -5 TYP. 1200 -3.5 4.0 2.9 MAX. -5.0 3.5 gm VGSoff IDSS VGSO Rth(c-c) CONDITIONS VDS= 3V IDS= 2.0A VDS= 3V IDS= 60mA VDS= 3V VGS= 0V IGS= -60A Channel to Case The information contained herein...
Description MICROWAVE POWER GaAs FET

File Size 168.66K  /  4 Page

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