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  -19a Datasheet PDF File

For -19a Found Datasheets File :: 1128    Search Time::1.937ms    
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    IRFH7934PBF IRFH7934TRPBF

International Rectifier
Part No. IRFH7934PBF IRFH7934TRPBF
OCR Text ...C nC VDS = 15V VGS = 4.5V ID = 19A V Conditions VGS = 0V, ID = 250A VGS = 10V, ID = 24A VGS = 4.5V, ID = 19A V/C Reference to 25C, ID = 1mA m V mV/C A nA S e e VDS = VGS, ID = 50A VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = ...
Description HEXFET Power MOSFET

File Size 308.50K  /  10 Page

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    MMBTA20LT1_D ON2135 MMBTA20

Motorola, Inc.
ON Semi
Part No. MMBTA20LT1_D ON2135 MMBTA20
OCR Text ... 50 t, TIME (ms) 100 200 FIGURE 19A DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN-569) ZJA(t) = r(t) * RJA TJ(pk) - TA = P(pk) ZJA(t) 5.0 k 10 k 20 k 50 k 100 k D = 0.5 0.2 0.01 0.01 0.02 ...
Description 40 AMP MINI-ISO AUTOMOTIVE RELAY
TYPICAL STATIC CHARACTERISTICS
From old datasheet system
General Purpose Amplifier

File Size 413.08K  /  8 Page

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    CHM1710PAPT

Chenmko Enterprise Co. Ltd.
Part No. CHM1710PAPT
OCR Text ...f Time Fall Time VDS=80V, ID=19A VGS=10V V DD= 50V I D =19A , VGS = 10 V RGEN= 25 26 3.3 16.2 17 51 16 71 34 nC ton 34 100 32 140 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Drain-Source Diode F...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 426.62K  /  3 Page

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    IRF9540 RF1S9540SM FN2282

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. IRF9540 RF1S9540SM FN2282
OCR Text 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in th...
Description 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
19A/ 100V/ 0.200 Ohm/ P-Channel Power MOSFETs
From old datasheet system

File Size 59.17K  /  7 Page

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    IRHM7264SE JANSR2N7434

International Rectifier
Part No. IRHM7264SE JANSR2N7434
OCR Text ...25C, ID = 1.0mA VGS = 12V, ID = 19A VGS = 12V, ID = 31A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 19A VDS= 200V ,VGS=0V VDS = 200V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 31A VDS = 125V VDD = 125V, ID =31A, VGS =12V, RG = 2....
Description RADIATION HARDENED POWER MOSFET

File Size 267.01K  /  8 Page

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    IRHYS67130CM

International Rectifier
Part No. IRHYS67130CM
OCR Text ...? 0.042 ? v gs = 12v, i d = 19a resistance v gs(th) gate threshold voltage 2.0 ? 4.0 v v ds = v gs , i d = 1.0ma ? v gs(th) / ? t j gate threshold voltage coefficient ? -8.72 ? mv/c g fs forward transconductance 14 ?...
Description Simple Drive Requirements

File Size 192.22K  /  9 Page

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    FQD60N03L FQD60N03LTM

Fairchild Semiconductor Corporation
Part No. FQD60N03L FQD60N03LTM
OCR Text ... 250A ID = 30A, V GS = 10V ID = 19A, V GS = 4.5V 1 0.014 0.024 3 0.023 0.030 V Dynamic Characteristics CISS COSS CRSS Qg(TOT) Qg(5) Qg(TH) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 1...
Description 30V N-Channel Logic Level MOSFETs
N-Channel Logic Level MOSFETs 30V, 30A, 0.023ohm

File Size 121.10K  /  11 Page

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    IRF5N5210

International Rectifier
Part No. IRF5N5210
OCR Text ... ? 0.06 ? v gs = -10v, i d = -19a resistance v gs(th) gate threshold voltage -2.0 ? -4.0 v v ds = v gs , i d = -250 a g fs forward transconductance 10 ? ? s v ds = -15v, i ds = -19a i dss zero gate voltage drain current ? ? ...
Description Avalanche Energy Ratings

File Size 168.91K  /  7 Page

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    CEP6186 CEB6186

Chino-Excel Technology
Part No. CEP6186 CEB6186
OCR Text ... 28A, VGS = 10V VDD = 30V, ID = 19A, VGS = 10V, RGEN = 4.7 15 5 38 10 24 6 6 33 1.5 30 10 76 20 31 ns ns ns ns nC nC nC A V VGS(th) RDS(on) gFS Ciss Coss Crss VGS = VDS, ID = 250A VGS = 10V, ID = 19A VDS = 10V, ID = 19A VDS = 25V, VGS = 0V,...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 432.03K  /  4 Page

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