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  -0.73a Datasheet PDF File

For -0.73a Found Datasheets File :: 152    Search Time::1.282ms    
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    2SK3586-0103

Fuji Electric
Part No. 2SK3586-0103
OCR Text ... channel to ambient 0.463 62.0 c/w c/w symbol v (br)dss v gs(th) i gss r ds(on) g fs c iss c oss c rss td (on) t r td (off) t ...73a i as =44a e as [mj] starting tch [ c] maximum avalanche energy vs. starting tch e as =f(star...
Description N-CHANNEL SILICON POWER MOSFET

File Size 93.01K  /  4 Page

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    2SK3588-01L03

Fuji Electric
Part No. 2SK3588-01L03
OCR Text ... channel to ambient 0.463 75.0 c/w c/w symbol v (br)dss v gs(th) i gss r ds(on) g fs c iss c oss c rss td (on) t r td (off) t ...73a i as =44a e as [mj] starting tch [ c] maximum avalanche energy vs. starting tch e as =f(star...
Description N-CHANNEL SILICON POWER MOSFET

File Size 247.34K  /  4 Page

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    Infineon
Part No. SPI73N03S2L-08
OCR Text ...ance, junction - case r thjc - 0.9 1.4 k/w smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 3) r thja - - - - 6...73a - 0.96 1.28 v reverse recovery time t rr v r =15v, i f = l s , d i f /d t =100a/s - 27 40 ns r...
Description Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-262, RDSon = 8.4mOhm, 73A, LL

File Size 523.66K  /  8 Page

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    NXP Semiconductors N.V.
Part No. PSMN6R0-25YLB PSMN6R0-25YLB-15
OCR Text ...ion of avalanche time 003aag105 0 20 40 60 80 0 50 100 150 200 t mb ( c) i d (a) t mb (c) 0 200 150 50 100 03na19 40 80 120 p der (%) 0 003aag106 1 10 10 2 10 -3 10 -2 10 -1 1 10 t al (ms) i al (a) (1) (2) psmn6r0-25...
Description N-channel 25 V 6.1 m logic level MOSFET in LFPAK using NextPower technology
N-channel 25 V 6.1 mΩ logic level MOSFET in LFPAK using NextPower technology
   N-channel 25 V 6.1 mΩ logic level MOSFET in LFPAK using NextPower technology

File Size 310.59K  /  15 Page

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    XC6371

Torex Semiconductor
Part No. XC6371
OCR Text ...nsumption operating voltage :0.9v~10.0v output voltage range :2.0v~7.0v output voltage accuracy : 2.5% oscillation frequency :5...73a xc6371/72/73c xc6371/72/73e *the dissipation pad for the usp-6b package should be solder-plat...
Description (XC6371 - XC6373) PWM Controlled Step-Up DC/DC Controllers/Converters

File Size 795.71K  /  18 Page

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    PSMN020-150W PSMN020

NXP Semiconductors
Part No. PSMN020-150W PSMN020
OCR Text ...b thermal resistance junction - 0.5 k/w to mounting base r th j-a thermal resistance junction in free air 45 - k/w to ambient electrical cha...73a tj = 25 c vdd = 30 v vdd = 120 v 0.1 1 10 100 0.001 0.01 0.1 1 10 avalanche time, t av (ms) max...
Description    N-channel TrenchMOS? transistor
N-channel TrenchMOS transistor(N沟道 TrenchMOS晶体

File Size 119.76K  /  7 Page

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    Advanced Power Technology Ltd.
Part No. APT60M75L2FLL
OCR Text ...istance 2 (v gs = 10v, 0.5 i d[cont.] ) zero gate voltage drain current (v ds = v dss , v gs = 0v) zero gate voltage drain curre...73a 0.075 w power mos 7 tm fredfet dynamic characteristics 050-7098 rev- 9-2001 apt's devices...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 65.57K  /  2 Page

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    NXP Semiconductors N.V.
Part No. PSMN6R0-30YL
OCR Text ... drain-source voltage 003aac631 0 20 40 60 80 100 0 50 100 150 200 t mb (c) i d (a) t mb (c) 0 200 150 50 100 03aa16 40 80 120 p der (%) 0 003aac633 10 -1 1 10 10 2 10 3 10 -1 1 10 10 2 v ds (v) i d (a) limit r dson ...
Description N-channel 30 V 6 m logic level MOSFET in LFPAK

File Size 200.38K  /  14 Page

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